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Helios NanoLab G3型聚焦离子/电子双束系统(FIB)

作者:        发布于:2018-05-23
测试中心册子11.30_页面_09_图像_0002.jpg
 
    型号:Helios NanoLab G3

 

  生产国别厂家:美国Thermo Fisher 公司

 

  主要技术指标:

 

    1、电子束分辨率:在最佳工作距离:0.6nm@15kV~2kV

 

在束交叉点分辨率:0.6nm@15kV

 

0.9nm@5kV

 

1.2nm @ 1kV

 

2、离子束分辨率:交叉点分辨率:4.0nm@30kV

 

 ( 采用Multi-edge 平均值法测量方式)

 

2.5nm@30kV

 

( 采用Selective-edge 平均值法测量方式)

 

3、电子束加速电压:0.02~30 kV

 

4、离子束加速电压:0.5~30 kV

 

  基本原理及用途:该设备应用电子束进行高分辨观测,离子束进行微纳结构加工,用于金属、半导体、电介质、多层膜结构等固体样品上制备微纳结构;高质量定点TEM样品制备;离子束刻蚀、离子束沉积等。

 

 

 

  Model: Helios NanoLab G3

 

  Manufacturer: Thermo Fisher, USA

 

  Main Specifications:

 

    1, electron beam resolution: the best working distance: 0.6nm@15kV~2kV

 

cross point: 0.6nm@15kV

 

0.9nm@5kV

 

1.2nm @ 1kV

 

2. Ion beam resolution: cross point: 4.0nm@30kV

 

(the Multi-edge mean method)

 

2.5nm@30kV

 

(the Selective-edge mean method)

 

3. Electron beam acceleration voltage: 0.02~30 kV

 

4. Ion beam acceleration voltage: 0.5~30 kV

 

Basic principles and applications: The machine uses electron beam for high resolution observation, and uses ion beam for micro nano structure fabrication. It is used to prepare micro nano structure on solid samples such as metal, semiconductor, dielectric and multilayer film structure. It is also used for high quality TEM sample preparation at specific area, ion beam etching, ion beam deposition, etc.

 

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